K5L5628JTM Datasheet, PDF (51/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
AC CHARACTERISTICS
Asynchronous Read
Parameter
Access Time from CE Low
Asynchronous Access Time
AVD Low Setup Time to CE Enable
AVD Low Hold Time from CE Disable
Output Enable to Output Valid
Output Enable Hold
Time
Read
Toggle and
Data Polling
Output Disable to High Z(Note 1)
Note: 1. Not 100% tested.
PPrreelliimmiinnaarryy
MCP MEMORY
Symbol
tCE
tAA
tAVDCS
tAVDCH
tOE
tOEH
tOEZ
7B
Min
Max
-
90
-
90
0
-
0
-
-
20
0
-
10
-
-
15
7C
Unit
Min
Max
-
80
ns
-
80
ns
0
-
ns
0
-
ns
-
20
ns
0
-
ns
10
-
ns
-
15
ns
SWITCHING WAVEFORMS
Asynchronous Mode Read
CLK ^VIL
CE
AVD
OE
WE
DQ0-DQ15
A0-A22
tAVDCS
tOE
tOEH
tCE
tAA
VA
tAVDCH
tOEZ
Valid RD
Figure 8. Asynchronous Mode Read
Note: VA=Valid Read Address, RD=Read Data.
51
Revision 1.0
November 2004