K5L5628JTM Datasheet, PDF (44/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Commom Flash Memory Interface
Common Flash Momory Interface is contrived to increase the compatibility of host system software. It provides the specific informa-
tion of the device, such as memory size and electrical features. Once this information has been obtained, the system software will
know which command sets to use to enable flash writes, block erases, and control the flash component.
When the system writes the CFI command(98H) to address 55H , the device enters the CFI mode. And then if the system writes the
address shown in Table 11, the system can read the CFI data. Query data are always presented on the lowest-order data out-
puts(DQ0-7) only. In word(x16) mode, the upper data outputs(DQ8-15) is 00h. To terminate this operation, the system must write the
reset command.
Table 11. Common Flash Memory Interface Code
Description
Query Unique ASCII string "QRY"
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
Vpp(Acceleration Program) Supply Minimum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
Vpp(Acceleration Program) Supply Maximum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
Typical timeout per single word write 2^N us
Typical timeout for Min. size buffer write 2^N us(00H = not supported)
Typical timeout per individual block erase 2^N ms
Typical timeout for full chip erase 2^N ms(00H = not supported)
Max. timeout for word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max. timeout for full chip erase 2^N times typical(00H = not supported)
Device Size = 2^N byte
Flash Device Interface description
Max. number of byte in multi-byte write = 2^N
Number of Erase Block Regions within device
Addresses
(Word Mode)
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
2AH
2BH
2CH
Data
0051H
0052H
0059H
0002H
0000H
0040H
0000H
0000H
0000H
0000H
0000H
0017H
0019H
0085H
0095H
0004H
0000H
000AH
0013H
0005H
0000H
0004H
0000H
0019H
0000H
0000H
0000H
0000H
0002H
44
Revision 1.0
November 2004