K5L5628JTM Datasheet, PDF (2/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
PPrreelliimmiinnaarryy
MCP MEMORY
Multi-Chip Package MEMORY
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
FEATURES
<Common>
• Handshaking Feature
• Operating Temperature : -30°C ~ 85°C
- Provides host system with minimum latency by monitoring
• Package : 115Ball FBGA Type - 8.0mm x 12.0mm
RDY
0.8mm ball pitch
• Erase Suspend/Resume
1.4mm (Max.) Thickness
• Program Suspend/Resume
<NOR Flash>
• Unlock Bypass Program/Erase
• Single Voltage, 1.7V to 1.95V for Read and Write operations • Hardware Reset (RESET)
• Organization
• Data Polling and Toggle Bits
- 16,772,216 x 16 bit ( Word Mode Only)
- Provides a software method of detecting the status of program
• Read While Program/Erase Operation
or erase completion
• Multiple Bank Architecture
• Endurance
- 16 Banks (16Mb Partition)
100K Program/Erase Cycles Minimum
• OTP Block : Extra 256Byte block
• Data Retention : 10 years
• Read Access Time (@ CL=30pF)
• Support Common Flash Memory Interface
- Asynchronous Random Access Time :
• Low Vcc Write Inhibit
90ns (54MHz) / 80ns (66MHz)
- Synchronous Random Access Time :
88.5ns (54MHz) / 70ns (66MHz)
- Burst Access Time :
14.5ns (54MHz) / 11ns (66MHz)
• Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with No-wrap & Wrap
• Block Architecture
- Eight 4Kword blocks and five hundreds eleven 32Kword
blocks
<UtRAM>
• Process Technology: CMOS
• Organization: 8M x16 bit
• Power Supply Voltage: VCC 2.5~2.7V, VCCQ 1.7~2.0V
• Three State Outputs
• Supports MRS (Mode Register Set)
• MRS control - MRS Pin Control
• Supports Power Saving modes - Partial Array Refresh mode
Internal TCSR
• Supports Driver Strength Optimization for system environment
power saving.
- Bank 0 contains eight 4 Kword blocks and thirty-one 32Kword _{• Supports Asynchronous 4-Page Read and Asynchronous Write}
blocks
Operation
- Bank 1 ~ Bank 15 contain four hundred eighty 32Kword blocks ^{• Supports Synchronous Burst Read and Synchronous Burst}
• Reduce program time using the VPP
• Support Single & Quad word accelerate program
• Power Consumption (Typical value, CL=30pF)
- Burst Access Current : 30mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 40mA
- Standby Mode/Auto Sleep Mode : 25uA
• Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=VIL
Write Operation
• Synchronous Burst(Read/Write) Operation
- Supports 4 word / 8 word / 16 word and Full Page(256 word)
burst
- Supports Linear Burst type & Interleave Burst type
- Latency support : Latency 3 @ 52.9MHz(tCD 12ns)
- Supports Burst Read Suspend in No Clock toggling
- Supports Burst Write Data Masking by /UB & /LB pin control
- Supports WAIT pin function for indicating data availability.
• Max. Burst Clock Frequency : 52.9MHz
- All blocks are protected by VPP=VIL
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2
Revision 1.0
November 2004