K5L5628JTM Datasheet, PDF (55/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Start
555h/AAh
2AAh/55h
555h/A0h
Program Address/Program Data
DATA Polling or Toggle Bit
Algorithm(See Below)
NO
Address = Address + 1
Last Address?
YES
Program Completed
Program Command Sequence (address/data)
Start
Read(DQ0~DQ7)
Valid Address
Start
Read(DQ0~DQ7)
Valid Address
Read(DQ0~DQ7)
Valid Address
DQ7 = Data ?
Yes
No
No
DQ5 = 1 ?
Yes
Read(DQ0~DQ7)
Valid Address
DQ6 = Toggle ?
No
Yes
No
DQ5 = 1 ?
Yes
Read twice(DQ0~DQ7)
Valid Address
Yes
DQ7 = Data ?
No
DQ6 = Toggle ?
No
Yes
Fail
Pass
Fail
Pass
Figure 1. Data Polling Algorithms
Figure 2. Toggle Bit Algorithms
Figure 11. Program Operation Flow Chart
55
Revision 1.0
November 2004