K5L5628JTM Datasheet, PDF (61/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
SWITCHING WAVEFORMS
Read While Write Operations
PPrreelliimmiinnaarryy
MCP MEMORY
CE
OE
WE
DQ0-DQ15
A0-A23
Last Cycle in
Program or
Block Erase
Command Sequence
tWC
Read status in same bank
and/or array data from other bank
tRC
tRC
Begin another
Program or Erase
Command Sequences
tWC
tOE
tOEH
tWPH
tWP
tDS
PD/30h
PA/BA
tAA
tDH
tSR/W
RA
tOEH
RD
RA
tGHWL
RD
AAh
555h
Figure 15. Read While Write Operation
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” and checking the status of the program or
erase operation in the “busy” bank.
61
Revision 1.0
November 2004