K5L5628JTM Datasheet, PDF (75/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Table 14. ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Power supply voltage relative to Vss
VCC
-0.2 to 3.0V
V
Output power supply voltage relative to Vss
VCCQ
-0.2 to 2.5V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-30 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
Table 15. RECOMMENDED DC OPERATING CONDITIONS¹⁾
Item
Power supply voltage
I/O power supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-30 to 85°C, otherwise specified.
2. Overshoot: VCC+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
VCC
VCCQ
Vss
VIH
VIL
Min
2.5
1.7
0
0.8 x VCCQ
-0.2³⁾
Typ
2.6
1.85
0
-
-
Max
2.7
2.0
0
VCCQ+0.2²⁾
0.4
Unit
V
V
V
V
V
75
Revision 1.0
November 2004