K5L5628JTM Datasheet, PDF (76/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Table 16. CAPACITANCE¹⁾(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
Table 17. DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input Leakage Current
Output Leakage Current
ILI VIN=Vss to VCCQ
ILO CS=VIH, MRS=VIH, OE=VIH or WE=VIL, VIO=Vss to VCCQ
-1
-
1 µA
-1
-
1 µA
Average Operating
Current(Async)
ICC2 ^{Cycle time=tRC+3tPC, IIO=0mA, 100% duty, CS=VIL, MRS=VIH,} -
VIN=VIL or VIH
-
40 mA
Average Operating
Current(Sync)
ICC3 ^{Burst Length 4, Latency 3, 52.9MHz, IIO=0mA, Address transi-} -
tion 1 time, CS=VIL, MRS=VIH, VIN=VIL or VIH
-
40 mA
Output Low Voltage
VOL IOL=0.1mA
-
-
0.2 V
Output High Voltage
Standby Current(CMOS)
VOH
ISB1²⁾
IOH=-0.1mA
CS≥VCCQ-0.2V, MRS≥VCCQ-0.2V, Other
inputs=Vss to VCCQ
< 40°C
< 85°C
1.4
-
-
V
-
- 130 µA
-
- 250 µA
Partial Refresh Current
ISBP¹⁾
MRS≤0.2V, CS≥VCCQ-0.2V
Other inputs=Vss to VCCQ
3/4 Block -
< 40°C _{1/2 Block -}
1/4 Block -
3/4 Block -
< 85°C _{1/2 Block -}
- 125
-
120 ^µA
- 115
- 235
-
220 ^µA
1/4 Block -
- 205
1. Full Array Partial Refresh Current(ISBP) is same as Standby Current(ISB1).
2. Standby mode is supposed to be set up after at least one active operation.after power up.
ISB1 is measured after 60ms from the time when standby mode is set up.
76
Revision 1.0
November 2004