K5L5628JTM Datasheet, PDF (58/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
SWITCHING WAVEFORMS
Unlock Bypass Program Operations(Accelerated Program)
PPrreelliimmiinnaarryy
MCP MEMORY
CE
WE
A0:A23
DQ0-DQ15
Don’t Care
A0h
OE
1us
tVPS
VID
VPP
VIL or VIH
tVPP
Unlock Bypass Block Erase Operations
CE
PA
Don’t Care
PD
Don’t Care
WE
A0:A23
DQ0-DQ15
Don’t Care
80h
BA
555h for
chip erase
Don’t Care
10h for
chip erase
30h
Don’t Care
OE
1us
tVPS
VID
VPP
VIL or VIH
tVPP
Notes:
1. VPP can be left high for subsequent programming pulses.
2. Use setup and hold times from conventional program operations.
3. Unlock Bypass Program/Erase commands can be used when the VID is applied to Vpp.
4. AVD Setup/Hold Time to CE Enable are same to Asynchronous Mode Read
Figure 12. Unlock Bypass Operation Timings
58
Revision 1.0
November 2004