K5L5628JTM Datasheet, PDF (57/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Start
555h/AAh
2AAh/55h
555h/80h
555h/AAh
2AAh/55h
555h/10h(Chip Erase)
BA/30h(Block Erase)
DATA Polling or Toggle Bit
Algorithm(See Below)
Erase Completed
Figure 13. Erase Operation Flow Chart
Start
Start
Read(DQ0~DQ7)
Valid Address
Read(DQ0~DQ7)
Valid Address
Read(DQ0~DQ7)
Valid Address
DQ7 = Data ?
Yes
No
No
DQ5 = 1 ?
Yes
Read(DQ0~DQ7)
Valid Address
Yes
DQ7 = Data ?
No
Fail
Pass
Figure 1. Data Polling Algorithms
DQ6 = Toggle ?
No
Yes
No
DQ5 = 1 ?
Yes
Read twice(DQ0~DQ7)
Valid Address
No
DQ6 = Toggle ?
Yes
Fail
Pass
Figure 2. Toggle Bit Algorithms
57
Revision 1.0
November 2004