K5L5628JTM Datasheet, PDF (45/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
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MCP MEMORY
Table 11. Common Flash Memory Interface Code (Continued)
Description
Erase Block Region 1 Information
Bits 0~15: y+1=block number
Bits 16~31: block size= z x 256bytes
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Query-unique ASCII string "PRI"
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock(Bits 1-0)
0 = Required, 1= Not Required
Silcon Revision Number(Bits 7-2)
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Block Protect
00 = Not Supported, 01 = Supported
Block Temporary Unprotect 00 = Not Supported, 01 = Supported
Block Protect/Unprotect scheme 00 = Not Supported, 01 = Supported
Simultaneous Operation
00 = Not Supported, 01 = Supported
Burst Mode Type 00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page 02 = 8 Word Page
Max. Operating Clock Frequency (MHz )
RWW(Read While Write) Functionality Restriction (00H = non exists , 01H = exists)
Handshaking
00 = Not Supported at both mode, 01 = Supported at Sync. Mode
10 = Supported at Async. Mode, 11 = Supported at both Mode
Addresses
(Word Mode)
2DH
2EH
2FH
30H
31H
32H
33H
34H
35H
36H
37H
38H
39H
3AH
3BH
3CH
40H
41H
42H
43H
44H
45H
46H
47H
48H
49H
4AH
4BH
4CH
4EH
4FH
50H
Data
0007H
0000H
0020H
0000H
00FEH
0001H
0000H
0001H
0000H
0000H
0000H
0000H
0000H
0000H
0000H
0000H
0050H
0052H
0049H
0031H
0030H
0000H
0002H
0001H
0000H
0001H
0001H
0001H
0000H
0042H
0000H
0001H
45
Revision 1.0
November 2004