K5L5628JTM Datasheet, PDF (53/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
AC CHARACTERISTICS
Erase/Program Operation
Parameter
Symbol
Min
WE Cycle Time(Note 1)
tWC
100
Address Setup Time(Note 2)
tAS
0
Address Hold Time(Note 2)
tAH
50
Data Setup Time
tDS
50
Data Hold Time
tDH
0
Read Recovery Time Before Write
tGHWL
-
CE Setup Time
CE Hold Time
tCS
5
tCH
5
WE Pulse Width
tWP
70
WE Pulse Width High
tWPH
30
Latency Between Read and Write Operations
tSR/W
0
Word Programming Operation
tPGM
-
Accelerated Single word Programming Operation
tACCPGM
-
Accelerated Quad word Programming Operation
tACCPGM_QUAD
-
Block Erase Operation (Note 3)
tBERS
-
VPP Rise and Fall Time
tVPP
500
VPP Setup Time (During Accelerated Programming)
tVPS
1
VCC Setup Time
tVCS
50
Notes:
1. Not 100% tested.
2. In write timing, addresses are latched on the falling edge of WE.
3. Include the preprogramming time.
PPrreelliimmiinnaarryy
MCP MEMORY
7B, 7C
Typ
-
-
-
-
-
0
-
-
-
-
-
11.5
6.5
6.5
0.7
-
-
-
Unit
Max
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
µs
-
µs
-
µs
-
sec
-
ns
-
µs
-
µs
FLASH Erase/Program Performance
Parameter
Block Erase Time
32 Kword
4 Kword
Chip Erase Time
Word Programming Time
Accelerated Sinlge Programming Time (@word)
Accelerated Quad Programming Time (@word)
Chip Programming Time
Accelerated Single word Chip Programming Time
Accelerated Quad word Chip Programming Time
Erase/Program Endurance (Note 3)
Min.
-
-
-
-
-
-
-
-
-
100,000
Limits
Typ.
0.7
0.2
360
11.5
6.5
1.6
193
109
27
-
Max.
14
4
-
210
120
30
-
-
-
-
Unit
Comments
sec
Includes 00h programming prior
to erasure
µs
Excludes system level overhead
sec
Cycles
Minimum 100,000 cycles guaran-
teed in all Bank
Notes:
1. 25°C, VCC = 1.8V, 100,000 cycles, typical pattern.
2. System-level overhead is defined as the time required to execute the two or four bus cycle command necessary to program each
word. In the preprogramming step of the Internal Erase Routine, all words are programmed to 00H before erasure.
3. 100K Program/Erase Cycle in all Bank
53
Revision 1.0
November 2004