PIC18F1220_07 Datasheet, PDF (254/308 Pages) Microchip Technology – 18/20/28-Pin High-Performance, Enhanced Flash Microcontrollers with 10-bit A/D and nanoWatt Technology

PIC18F1220/1320
TABLE 22-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications⁽¹⁾
D110 VPP Voltage on MCLR/VPP pin
9.00
— 13.25 V (Note 2)
D112 IPP Current into MCLR/VPP pin
—
—
5
μA
D113 IDDP Supply Current during
Programming
—
—
10 mA
Data EEPROM Memory
D120 ED Byte Endurance
100K 1M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽³⁾
1M
10M
— E/W -40°C to +85°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5
V Using ICSP port
D132A VIW VDD for Externally Timed Erase
4.5
—
5.5
V Using ICSP port
or Write
D132B VPEW VDD for Self-Timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP™ Block Erase Cycle Time —
4
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
—
ms VDD > 4.5V
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of table write
instructions.
2: The pin may be kept in this range at times other than programming, but it is not recommended.
3: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
DS39605F-page 252
© 2007 Microchip Technology Inc.