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MC908MR16CFUE Datasheet, PDF (40/282 Pages) Freescale Semiconductor, Inc – On-chip programming firmware for use with host personal computer, Clock generator module (CGM)
Memory
2.8.3 FLASH Mass Erase Operation
Use this step-by-step procedure to erase the entire FLASH memory.
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address(1) within the FLASH memory address range.
4. Wait for a time, tNVS (minimum 10 µs).
5. Set the HVEN bit.
6. Wait for a time, tMErase (minimum 4 ms).
7. Clear the ERASE and MASS bits.
NOTE
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
8. Wait for a time, tNVHL (minimum 100 µs).
9. Clear the HVEN bit.
10. After time, tRCV (typical 1 µs), the memory can be accessed in read mode again.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
1. When in monitor mode, with security sequence failed (see 18.3.2 Security), write to the FLASH block protect register instead
of any FLASH address.
MC68HC908MR32 • MC68HC908MR16 Data Sheet, Rev. 6.1
40
Freescale Semiconductor