K522H1HACF-B050 Datasheet, PDF (89/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
8. WRITE INTERRUPTED BY PRECHARGE & DM
Rev. 1.0
MCP Memory
0
1
2
3
4
5
6
7
8
9
10
11
12
13
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
BA0,BA1
BAa
BAa
BAb
BAc
A10/AP
ADDR
(A0~An)
Ca
DQS
Hi-Z
DQs
Hi-Z
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
Cb
Cc
Db0 Db1 Dc0 Dc1 Dc2 Dc3 Dc4 Dc5 Dc6 Dc7
DM
COMMAND
WRITE
tWR
tCCD
PRE
CHARGE
WRITE
WRITE
Figure 25. Write Interrupted by Precharge & DM (@BL=8)
: Don’t care
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