K522H1HACF-B050 Datasheet, PDF (85/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
4. MULTI BANK INTERLEAVING WRITE
Rev. 1.0
MCP Memory
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
BA0,BA1
BAa
BAb
BAa
BAb
A10/AP
ADDR
(A0~An)
DQS
Ra
Rb
Ra
Rb
Ca
Cb
tRRD
Hi-Z
tCCD
DQs
Hi-Z
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
DM
COMMAND
ACTIVE
tRCD
ACTIVE
WRITE
WRITE
Figure 21. Multi Bank Interleaving WRITE (@BL=4)
: Don’t care
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