K522H1HACF-B050 Datasheet, PDF (79/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
19. POWER DOWN
The device enters power down mode when CKE Low, and it exits when CKE High. Once the power down mode is initiated, all of the receiver circuits
except CK and CKE are gated off to reduce power consumption. All banks should be in idle state prior to entering the precharge power down mode and
CKE should be set in high for at least tPDEX prior to Row active command. Refresh operations cannot be performed during power down mode, therefore
the device cannot remain in power down mode longer than the refresh period(tREF) of the device.
CK
CK
Command Precharge NOP
NOP
Precharge
power
down
Entry
CKE
tIS
DQ
DQS
tCKE
Precharge
power
down
Active
Exit
(NOP)
tPDEX
Active
power
down
Entry
tIS
tIS
High-Z
High-Z
tCKE
Active
power
down
Exit
Read
tIS
Figure 16. Power down entry and exit timing
NOTE :
1) Device must be in the all banks idle state prior to entering Power Down mode.
2) The minimum power down duration is specified by tCKE.
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