K522H1HACF-B050 Datasheet, PDF (76/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
16. READ WITH AUTO PRECHARGE
If A10/AP is high when read command is issued, the read with auto-precharge function is performed. If a read with auto-precharge command is issued,
the Mobile DDR SDRAM automatically enters the precharge operation BL/2 clock later from a read with auto-precharge command when tRAS(min) is sat-
isfied. If not, the start point of precharge operation will be delayed until tRAS(min) is satisfied. Once the precharge operation has started, the bank cannot
be reactivated and the new command can not be asserted until the precharge time(tRP) has been satisfied.
0
CK
CK
BANK A
Command _ACTIVE
1
NOP
2
NOP
DQS
Hi-Z
3
4
5
6
NOP
READ A
Auto Precharge
NOP
NOP
7
8
NOP
NOP
tRP
9
10
11
NOP NOP
NOP
Bank can be reactivated at
completion of tRP²⁾
DQs
Hi-Z
tRAS(min)
Dout0 Dout1 Dout2 Dout3
Auto-Precharge starts
Figure 12. Read with auto precharge timing
NOTE :
1) Burst Length=4, CAS Latency= 3.
2) The row active command of the precharge bank can be issued after tRP from this point.
Asserted
command
READ
READ+AP
Active
Precharge
5
READ +No AP¹⁾
READ + AP
Illegal
Legal
NOTE :
1) AP = Auto Precharge.
For same Bank
6
READ+No AP
READ + AP
Illegal
Legal
7
Illegal
Illegal
Illegal
Illegal
5
Legal
Legal
Legal
Legal
For Different Bank
6
Legal
Legal
Legal
Legal
7
Legal
Legal
Legal
Legal
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