K522H1HACF-B050 Datasheet, PDF (33/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
3.13 Read ID Operation
CLE
CE
datasheet
Rev. 1.0
MCP Memory
WE
tAR
ALE
RE
I/Ox
90h
Read ID Command
tREA
00h
Address 1cycle
ECh
Device
Code
Maker Code Device Code
3rd cyc.
4th cyc.
5th cyc.
Device
2Gb(x8)
4Gb DDP(x8)
2Gb(x16)
4Gb DDP(x16)
Device Code (2nd Cycle)
AAh
ACh
BAh
BCh
3rd Cycle
00h
01h
00h
01h
4th Cycle
15h
15h
55h
55h
5th Cycle
44h
48h
44h
48h
3.13.1. ID Definition Table
90 ID : Access command = 90H
Description
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
Maker Code
Device Code
Internal Chip Number
Page Size, Block Size,Redundant Area Size, Organization
Plane Number, Plane Size, ECC Level
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