K522H1HACF-B050 Datasheet, PDF (56/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
9.0 AC OPERATING TEST CONDITIONS (VDD = 1.7V to 1.95V, TC = -25°C to 85°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input signal minimum slew rate
Output timing measurement reference level
Output load condition
Value
0.8 x VDDQ / 0.2 x VDDQ
0.5 x VDDQ
1.0
0.5 x VDDQ
See Figure 6
Unit
V
V
V/ns
V
Output
10.6KΩ
1.8V
13.9KΩ
- VOH (DC) = 0.9 x VDDQ, I_OH = -0.1mA
- VOL (DC) = 0.1 x VDDQ, I_OL = 0.1mA
20pF
Figure 5. DC Output Load Circuit
Output
Z0=50Ω
Vtt=0.5 x VDDQ
50Ω
Test load values need to be proportional to the driver strength
which is set by the controller.
- Test load for Full Driver Strength Buffer (20pF)
- Test load for Half Driver Strength Buffer (10pF)
Figure 6. AC Output Load Circuit ^{1), 2)}
NOTE :
1) The circuit shown above represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representa-
tion of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate
the timing reference load to system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester
electronics). For the half driver strength with a nominal 10pF load parameters t_AC and t_QH are expected to be in the same range. However, these parameters are not subject to
production test but are estimated by design / characterization. Use of IBIS or other simulation tools for system design validation is suggested.
2) Based on nominal impedance at 0.5 x VDDQ.
The impedence for Half(1/2) Driver Strength is designed 55ohm. And for other Driver Strength, it is designed proportionally.
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