K522H1HACF-B050 Datasheet, PDF (36/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
4.0 Device Operation
4.1 PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command is latched. There-
fore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes(1,056 Words) of data within the selected
page are transferred to the data registers in 40μs(tR) typically. The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 42ns cycle time by sequentially pulsing RE. The repet-
itive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command. The column address
of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated
multiple times regardless of how many times it is done in a page.
CLE
CE
WE
ALE
R/B
RE
I/Ox
Figure 8. Read Operation
tR
00h
Address(5Cycle)
30h
Col. Add.1,2 & Row Add.1,2,3
Data Output(Serial Access)
Data Field
Spare Field
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