K522H1HACF-B050 Datasheet, PDF (17/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
1.10 AC Characteristics for Operation
Parameter
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
WP Low to WE Low (disable mode)
WP High to WE Low (enable mode)
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
CE High to ALE or CLE Don’t Care
RE High to Output Hold
CE High to Output Hold
RE High Hold Time
Output Hi-Z to RE Low
RE High to WE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
Symbol
Min
t_AR
10
t_CLR
10
t_RR
20
t_RP
21
t_WB
-
t_WW
100
t_RC
42
t_REA
-
t_CEA
-
t_RHZ
-
t_CHZ
-
t_CSD
0
t_ROH
15
t_COH
15
t_REH
10
t_IR
0
t_RHW
100
t_WHR
60
t_RST
-
NOTE :
1) If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5μs.
Rev. 1.0
MCP Memory
Max
Unit
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
-
ns
30
ns
35
ns
100
ns
30
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5/10/500⁽¹⁾
μs
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