K522H1HACF-B050 Datasheet, PDF (59/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
13.0 COMMAND TRUTH TABLE
Register
Command
Mode Register Set
CKEn-1 CKEn CS
H
X
L
RAS
L
CAS
L
WE BA0,1 A10/AP
A13~11,
A9~A0
Note
L
OP CODE
1, 2
Auto Refresh
H
3
H
L
L
L
H
X
Entry
L
3
Refresh
Self
Refresh
Exit
L
H
H
H
L
H
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
V
Row Address
Read &
Column Address
Auto Precharge Disable
Auto Precharge Enable
H
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
H
Deep Power Down
Entry
H
Exit
L
X
L
H
L
H
V
X
L
H
L
L
V
L
L
H
H
L
H
H
X
X
X
L
Column
4
Address
H
(A0~A9)
4
L
Column
4
Address
H
(A0~A9) ^{4, 6}
X
Burst Stop
H
X
L
H
H
L
X
7
Precharge
Bank Selection
All Banks
V
L
H
X
L
L
H
L
X
H
X
5
H
X
X
X
Entry
H
L
Active Power Down
L
H
H
H
X
Exit
L
H
X
X
X
X
H
X
X
X
Entry
H
L
L
H
H
H
Precharge Power Down
X
H
X
X
X
Exit
L
H
L
H
H
H
DM
H
X
X
8
H
X
X
X
9
No operation (NOP) : Not defined
H
X
X
L
H
H
H
9
(V=Valid, X=Don’t Care, H=Logic High, L=Logic Low)
NOTE :
1) OP Code : Operand Code. A0 ~ A13 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2) EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3) Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4) BA0 ~ BA1 : Bank select addresses.
5) If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6) During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t_RP after the end of burst.
7) Burst stop command is valid at every burst length.
8) DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9) This combination is not defined for any function, which means "No Operation(NOP)" in Mobile DDR SDRAM.
- 19 -