K522H1HACF-B050 Datasheet, PDF (65/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
1. PRECHARGE
The precharge command is used to precharge or close a bank that has been activated. The precharge command is issued when CS, RAS and WE are
low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge each bank respectively or all banks simultane-
ously. The bank select addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write cycle, tWR(min.) must
be satisfied until the precharge command can be issued. After tRP from the precharge, an active command to the same bank can be initiated.
[Table 1] Bank selection for precharge by Bank address bits
A10/AP
BA1
0
0
0
0
0
1
0
1
1
X
BA0
0
1
0
1
X
Precharge
Bank A Only
Bank B Only
Bank C Only
Bank D Only
All Banks
2. NO OPERATION(NOP) & DEVICE DESELECT
The device should be deselected by deactivating the CS signal. In this mode, Mobile DDR SDRAM should ignore all the control inputs. The Mobile DDR
SDRAM is put in NOP mode when CS is activated and RAS, CAS and WE are deactivated. Both Device Deselect and NOP command can not affect oper-
ation already in progress. So even if the device is deselected or NOP command is issued under operation, the operation will be completed.
-3-