K522H1HACF-B050 Datasheet, PDF (16/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
1.8 Read / Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Read Time (Data Transfer from Cell to Register)
tR
-
-
40
Program Time
tPROG
-
250
750
Number of Partial Program Cycles
in the Same Page
Nop
-
-
4
Block Erase Time
tBERS
-
2
10
NOTE :
1) Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 1.8V Vcc and 25°C temperature.
Unit
μs
μs
cycles
ms
1.9 AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
Symbol
Min
t_CLS ¹⁾
21
t_CLH
5
t_CS ¹⁾
21
t_CH
5
t_WP
21
t_ALS ¹⁾
21
t_ALH
5
t_DS ¹⁾
20
tDH
5
t_WC
40
t_WH
10
t_ADL ²⁾
100
NOTE :
1) The transition of the corresponding control pins must occur only once while WE is held low
2) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Max
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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