K522H1HACF-B050 Datasheet, PDF (67/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
6. BURST READ OPERATION
Burst Read operation in Mobile DDR SDRAM is in the same manner as the Mobile SDR SDRAM such that the Burst read command is issued by asserting
CS and CAS low while holding RAS and WE high at the rising edge of the clock(CK) after tRCD from the bank activation. The address inputs determine
the starting address for the Burst. The Mode Register sets type of burst (Sequential or interleave) and burst length(2, 4, 8, 16). The first output data is
available with a CAS Latency from the READ command, and the consecutive data are presented on the falling and rising edge of Data Strobe (DQS)
adopted by Mobile DDR SDRAM until the burst length is completed.
0
CK
CK
Command READ A
1
NOP
2
NOP
3
NOP
4
NOP
5
NOP
DQS
Hi-Z
DQs
Hi-Z
tDQSCK
tRPRE
tRPST
Preamble
tAC
Postamble
Dout 0 Dout 1 Dout 2 Dout 3
6
NOP
7
NOP
8
NOP
NOTE :
1) Burst Length=4, CAS Latency= 3.
Figure 2. Burst read operation timing
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