K522H1HACF-B050 Datasheet, PDF (50/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
3.3 Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, this Mobile DRAM includes the internal temperature sensor and control units to control the self refresh cycle auto-
matically according to the real device temperature.
2. TCSR ranges for IDD6 shown in the table are only examples.
3. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Temperature Range
Full Array
Self Refresh Current (IDD6)
1/2 Array
85 °C
900
800
45 °C
200
150
NOTE :
1) IDD6 85°C is guaranteed, IDD6 45°C is typical value.
1/4 Array
700
120
Unit
uA
3.4 Partial Array Self Refresh (PASR)
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
Figure 4. EMRS code and TCSR, PASR
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
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