K522H1HACF-B050 Datasheet, PDF (21/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
NAND Flash Technical Notes (Continued)
2.4 Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB(least significant bit) page of the block to the MSB(most significant bit) pages
of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB among the pages to be programmed.
Therefore, LSB doesn't need to be page 0.
Page 63
(64)
:
Page 31
(32)
:
Page 2
(3)
Page 1
(2)
Page 0
(1)
Page 63
(64)
:
Page 31
(1)
:
Page 2
(3)
Page 1
(32)
Page 0
(2)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
Data (64)
Data register
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Data (64)
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