K522H1HACF-B050 Datasheet, PDF (51/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
4.0 ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Voltage on any pin relative to VSS
V_IN, V_OUT
Voltage on VDD supply relative to VSS
VDD
Voltage on VDDQ supply relative to VSS
VDDQ
Storage temperature
T_STG
Power dissipation
P_D
Short circuit current
I_OS
NOTE :
1) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
2) Functional operation should be restricted to recommend operation condition.
3) Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Value
- 0.5 ~ 2.7
- 0.5 ~ 2.7
- 0.5 ~ 2.7
- 55 ~ + 150
1.0
50
Unit
V
V
V
°C
W
mA
5.0 DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS=0V, T_C = -25°C to 85°C)
Parameter
Symbol
Min
Max
Supply voltage (for device with a nominal VDD of 1.8V)
VDD
1.7
1.95
I/O Supply voltage
VDDQ
1.7
1.95
Input logic high voltage
Address
Data
V_IH(DC)
0.8 x VDDQ
0.7 x VDDQ
VDDQ + 0.3
VDDQ + 0.3
Input logic low voltage
Address
Data
V_IL(DC)
-0.3
0.2 x VDDQ
-0.3
0.3 x VDDQ
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
V_OH(DC)
V_OL(DC)
I_I
I_OZ
0.9 x VDDQ
-
-2
-5
-
0.1 x VDDQ
2
5
NOTE :
1) Under all conditions, VDDQ must be less than or equal to VDD.
2) These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
3) Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
Unit
V
V
V
V
V
V
V
V
uA
uA
Note
1
1
2
2
I_OH = - 0.1mA
I_OL = 0.1mA
3
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