K522H1HACF-B050 Datasheet, PDF (7/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
5. ORDERING INFORMATION
Samsung
MCP Memory(2chips)
K 5 2 2H 1H A C F - B 0 50
Device Type
NAND + Mobile DDR SDRAM
NAND Density,Organization
2H: 2G, x16
Mobile DDR Density, Organization
1H: 1G, x16
Operating Voltage
A: 1.8V / 1.8V
Rev. 1.0
MCP Memory
Mobile DDR Speed
50 : 400Mbps@CL3
NAND Speed
0: None
Package
B : FBGA(HF, OSP LF)
Version
F : 7th Generation
Flash Block Architecture
C : Uniform Block
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