K522H1HACF-B050 Datasheet, PDF (71/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
11. WRITE INTERRUPTED BY A WRITE
A Burst Write can be interrupted by a new Write command before completion of the burst, where the interval between the successive Write commands
must be at least one clock cycle(tCCD(min)). When the previous burst is interrupted, the remaining addresses are overridden by the new address and
data will be written into the device until the programmed burst length is satisfied.
0
CK
CK
Command
NOP
1
2
tCCD(min)
WRITE A WRITE b
3
NOP
4
NOP
5
NOP
6
NOP
DQS
Hi-Z
DQs
Hi-Z
NOTE :
1) Burst Length=4.
Din A0 Din A1 Din B0 Din B1 Din B2 Din B3
Figure 7. Write interrupted by a write timing
7
NOP
8
NOP
-9-