K522H1HACF-B050 Datasheet, PDF (77/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
17. WRITE WITH AUTO PRECHARGE
If A10/AP is high when write command is issued, the write with auto-precharge function is performed. Any new command to the same bank should not be
issued until the internal precharge is completed. The internal precharge begins after keeping tWR(min).
0
CK
CK
BANK A
Command _ACTIVE
1
NOP
2
NOP
3
4
5
NOP ^{WRITE A} NOP
Auto Precharge
6
NOP
7
NOP
8
NOP
9
10
11
12
13
NOP NOP
NOP
NOP
NOP
DQS
Hi-Z
DQs
Hi-Z
Din 0 Din 1 Din 2 Din 3
Bank can be reactivated at
completion of t_RP2)
tWR
tRP
Internal precharge start
Figure 13. Write with auto precharge timing
NOTE :
1) Burst Length=4.
2) The row active command of the precharge bank can be issued after tRP from this point.
Asserted
command
WRITE
WRITE+
AP
READ
READ+AP
Active
Precharge
5
WRITE+
No AP¹⁾
WRITE+
AP
Illegal
Illegal
Illegal
Illegal
6
WRITE+
No AP
WRITE+
AP
READ+
NO AP+DM²⁾
READ +
AP+DM
Illegal
Illegal
For same Bank
7
8
Illegal
Illegal
Illegal
READ+
NO AP+DM
READ +
AP+DM
Illegal
Illegal
Illegal
READ+
NO AP
READ +
AP
Illegal
Illegal
NOTE :
1) AP = Auto Precharge.
2) DM : Refer to "27. Write Interrupted by Precharge & DM ".
9
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
10
Illegal
5
Legal
Illegal Legal
Illegal Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
For Different Bank
6
7
8
Legal Legal Legal
9
Legal
Legal Legal Legal Legal
Illegal Illegal Legal Legal
Illegal
Legal
Legal
Illegal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
Legal
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