K522H1HACF-B050 Datasheet, PDF (20/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Write 60h
Write Block Address
Write D0h
Read Status Register
I/O 6 = 1 ?
No
or R/B = 1 ?
*
No
Erase Error
Yes
I/O 0 = 0 ?
Yes
Erase Completed
* : If erase operation results in an error, map out
the failing block and replace it with another block.
Start
Write 00h
Write Address
Write 30h
Read Data
ECC Generation
No
Reclaim the Error
Verify ECC
Yes
Page Read Completed
Block Replacement
{ ^1st
(n-1)th
nth
(page)
Block A
an error occurs.
1
Buffer memory of the controller.
Block B
{ ^1st
(n-1)th
2
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
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