K522H1HACF-B050 Datasheet, PDF (57/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
10.0 INPUT/OUTPUT CAPACITANCE (VDD=1.8, VDDQ=1.8V, TC = 25°C, f=100MHz)
Parameter
Input capacitance
(A0 ~ A13, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance (CK, CK)
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
Min
Max
Unit
CIN1
1.5
3.0
pF
CIN2
1.5
3.5
pF
COUT
2.0
4.5
pF
CIN3
2.0
4.5
pF
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