K522H1HACF-B050 Datasheet, PDF (75/94 Pages) Samsung semiconductor – MCP Specification

K522H1HACF-B050
datasheet
Rev. 1.0
MCP Memory
15. DM MASKING
The Mobile DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read cycle. When the data mask is acti-
vated(DM high) during write operation, Mobile DDR SDRAM does not accept the corresponding data.(DM to data-mask latency is zero). DM must be
issued at the rising or falling edge of data strobe.
0
1
2
3
4
5
CK
CK
Command
DQS
DQs
WRITE
NOP
tDQSS
NOP
NOP
NOP
NOP
tWPRES tWPREH
Din 0 Din 1 Din 2 Din 3 Din 4 Din 5 Din 6 Din7
DM
NOTE :
1) Burst Length=8.
masked by DM=H
Figure 11. DM masking timing
6
7
NOP
NOP
Hi-Z
Hi-Z
8
NOP
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