HD64F3664FPV Datasheet, PDF (356/446 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
20.2.6 Memory Characteristics
Table 20.8 Flash Memory Characteristics
V_CC = 3.0 V to 5.5 V, V_SS = 0.0 V, T_a = –20°C to +75°C, unless otherwise specified.
Test
Item
Symbol Condition
Programming time (per 128 bytes)*¹*²*⁴
t_P
Erase time (per block) *¹*³*⁶
t_E
Reprogramming count
N_WEC
Programming Wait time after SWE
x
bit setting*¹
Wait time after PSU
y
bit setting*¹
Wait time after P bit setting*¹*⁴ z1
1≤n≤6
z2
7 ≤ n ≤ 1000
z3
Wait time after P bit clear*¹ α
Wait time after PSU bit clear*¹ β
Wait time after PV bit setting*¹ γ
Wait time after dummy write*¹ ε
Wait time after PV bit clear*¹ η
Wait time after SWE bit clear*¹ θ
Additional-
programming
Maximum
N
programming count*¹*⁴*⁵
Min
—
—
1000
1
50
28
198
8
5
5
4
2
2
100
—
Values
Typ Max
7
200
100 1200
10000 —
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev. 6.00 Mar. 24, 2006 Page 326 of 412
REJ09B0142-0600