M16C6N4 Datasheet, PDF (301/406 Pages) Renesas Technology Corp – 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES

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M16C/6N Group (M16C/6N4)
21.7 Electrical Characteristics
21. Flash Memory Version
21.7.1 Electrical Characteristics (T/V-ver.)
Table 21.9 lists the flash memory electrical characteristics. Table 21.10 lists the flash memory version
program/erase voltage and read operation voltage characteristics.
Table 21.9 Flash Memory Version Electrical Characteristics ⁽¹⁾
Symbol
Parameter
-
Program and Erase Endurance ⁽²⁾
Min.
100
Standard
Typ.
Max.
Unit
cycle
-
Word Program Time (VCC = 5.0V)
25
200
µs
-
Lock Bit Program Time
25
200
µs
-
Block Erase Time
4-Kbyte block
0.3
4
s
(VCC = 5.0V)
8-Kbyte block
0.3
4
s
32-Kbyte block
0.5
4
s
64-Kbyte block
0.8
4
s
-
Erase All Unlocked Blocks Time
tps
Flash Memory Circuit Stabilization Wait Time
4 ✕ n ^{(3) s}
15
µs
NOTES:
1. Referenced to VCC = 4.5 to 5.5V, Topr = 0 to 60°C unless otherwise specified.
2. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n = 100), each block can be erased n times.
For example, if a 4-Kbyte block A is erased after writing 1 word data 2,048 times, each to a different
address, this counts as one program and erase endurance. Data cannot be written to the same
address more than once without erasing the block. (Rewrite prohibited)
3. n denotes the number of blocks to erase.
Table 21.10 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60 °C)
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC = 5.0 ± 0.5V
VCC = 4.2 to 5.5V
Rev.2.30 Oct 24, 2005 page 283 of 376
REJ09B0009-0230