MC9S08DZ128 Datasheet, PDF (70/458 Pages) Freescale Semiconductor, Inc – Microcontrollers

Chapter 4 Memory
a burst program command is issued, the charge pump is enabled and remains enabled after completion of
the burst program operation if these two conditions are met:
• The next burst program command sequence has begun before the FCCF bit is set.
• The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this FLASH memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning of
a new row, the program time for that byte will be the standard time instead of the burst time. This is because
the high voltage to the array must be disabled and then enabled again. If a new burst command has not been
queued before the current command completes, then the charge pump will be disabled and high voltage
removed from the array.
A flowchart to execute the burst program operation is shown in Figure 4-12.
MC9S08DZ128 Series Data Sheet, Rev. 1
70
Freescale Semiconductor