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| K4B1G0446C Datasheet, PDF (58/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification | |||
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K4B1G04(08/16)46C
Note :Clock and Strobe are drawn on a different time scale.
tIS
tIH
CK
CK
DQS
DQS
VDDQ
tDS tDH
VIH(ac) min
VIH(dc) min
dc to VREF
region
VREF(dc)
dc to VREF
region
VIL(dc) max
tangent
line
VIL(ac) max
1Gb DDR3 SDRAM
tIS tIH
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
Delta TR
Delta TF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(dc) - Vil(dc)max ]
Delta TR
HFoalldlinSgleSwigRnaalte=
tangent line [ Vih(dc)min - VREF(dc) ]
Delta TF
Figure 24 - Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock)
Page 58 of 63
Rev. 1.0 June 2007
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