K4B1G0446C Datasheet, PDF (23/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
AC Overshoot/Undershoot Specification for Address and Control Pins
(A0-A12, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT)
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 8)
Maximum peak amplitude allowed for undershoot area (See Figure 8)
Maximum overshoot area above VDD (See Figure 8)
Maximum undershoot area below VSS (See Figure 8)
DDR3-800
0.4V
0.4V
0.67V-ns
0.67V-ns
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins
Maximum Amplitude
1Gb DDR3 SDRAM
Specification
DDR3-1066
DDR3-1333
0.4V
0.4V
0.4V
0.4V
0.5V-ns
0.4V-ns
0.5V-ns
0.4V-ns
DDR3-1600
0.4V
0.4V
0.33V-ns
0.33V-ns
Overshoot Area
VDD
Volts
(V)
VSS
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 10. Address and Control Overshoot and Undershoot definition
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins
(DQ, DQS, DQS, DM, CK, CK)
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 9)
Maximum peak amplitude allowed for undershoot area (See Figure 9)
Maximum overshoot area above VDDQ (See Figure 9)
Maximum undershoot area below VSSQ (See Figure 9)
DDR3-800
0.4V
0.4V
0.25V-ns
0.25V-ns
Specification
DDR3-1066
DDR3-1333
0.4V
0.4V
0.4V
0.4V
0.19V-ns
0.15V-ns
0.19V-ns
0.15V-ns
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask
Maximum Amplitude
Overshoot Area
DDR3-1600
0.4V
0.4V
0.13V-ns
0.13V-ns
Volts ^VDDQ
(V)
VSSQ
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 11. Clock, Data, Strobe and Mask Overshoot and Undershoot definition
Page 23 of 63
Rev. 1.0 June 2007