K4B1G0446C Datasheet, PDF (29/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
VSSQ
Figure 15. Definition of tAON
t_AON
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at VSSQ
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
VSSQ
Figure 16. Definition of tAONPD
t_AONPD
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at VSSQ
1Gb DDR3 SDRAM
VTT
VSSQ
VTT
VSSQ
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOF
End point Extrapolated point at VRTT_Nom
V_SW1
T_SW2
T_SW1
VTT
VSSQ
TD_TAON_DEF
Figure 17. Definition of tAOF
Page 29 of 63
Rev. 1.0 June 2007