K4B1G0446C Datasheet, PDF (46/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
12.3 Refresh Parameters by Device Density
1Gb DDR3 SDRAM
Parameter
Symbol
512Mb
1Gb
All Bank Refresh to active/refresh cmd time
tRFC
90
110
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
7.8
tREFI
85 °C < T_CASE ≤ 95°C
3.9
3.9
[ Table 47 ] Refresh parameters by device density
2Gb
160
7.8
3.9
4Gb
300
7.8
3.9
8Gb
Units
350
ns
7.8
µs
3.9
µs
12.4 Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
[ Table 48 ] DDR3-800 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5 / CWL = 5
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
Symbol
t_AA
t_RCD
t_RP
t_RC
t_RAS
t_CK(AVG)
t_CK(AVG)
DDR3-800
6-6-6
min
max
15
20
15
-
15
-
52.5
-
37.5
9*tREFI
Reserved
2.5
3.3
6
5
Units
ns
ns
ns
ns
ns
ns
ns
n_CK
n_CK
[ Table 49 ] DDR3-1066 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CWL = 5
CWL = 6
CL = 6
CWL = 5
CWL = 6
CL = 7
CWL = 5
CWL = 6
CL = 8
CWL = 5
CWL = 6
Supported CL Settings
Supported CWL Settings
Symbol
t_AA
t_RCD
t_RP
t_RC
t_RAS
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
t_CK(AVG)
DDR3-1066
7-7-7
min
max
13.125
20
13.125
-
13.125
-
50.625
-
37.5
9*tREFI
Reserved
Reserved
2.5
3.3
Reserved
Reserved
1.875
<2.5
Reserved
1.875
<2.5
6,7,8
5,6
DDR3-1066
8-8-8
min
max
15
20
15
-
15
-
52.5
-
37.5
9*tREFI
Reserved
Reserved
2.5
3.3
Reserved
Reserved
Reserved
Reserved
1.875
<2.5
6,8
5,6
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
n_CK
n_CK
Note
8
1,2,3,4
1,2,3
Note
8
1,2,3,4,6
4
1,2,3,6
1,2,3,4
4
1,2,3,4
4
1,2,3
Page 46 of 63
Rev. 1.0 June 2007