K4B1G0446C Datasheet, PDF (32/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
Timing parameters are listed in the following table:
[ Table 33 ] For IDD testing the following parameters are utilized.
Parameter Bin
DDR3-800
6-6-6
DDR3-1066
7-7-7
8-8-8
t_CKmin(IDD)
2.5
1.875
CL(IDD)
6
7
8
t_RCDmin(IDD)
15
13.13
15
t_RCmin(IDD)
52.5
50.63
52.50
t_RASmin(IDD)
37.5
37.5
37.5
t_RPmin(IDD)
15
13.13
15
x4/x8
40
t_FAW(IDD)
x16
50
37.5
37.5
50
50
x4/x8
10
t_RRD(IDD)
x16
10
7.5
7.5
10
10
t_RFC(IDD) - 1Gb
110
110
110
The following conditions apply:
1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Parametric test conditions.
3. IDD parameters are specified with ODT and output buffer disabled (MR1 Bit A12).
DDR3-1333
Unit
8-8-8
9-9-9
1.5
ns
8
9
12
13.5
ns
48
49.5
ns
36
36
ns
12
13.5
ns
30
30
ns
45
45
ns
6.0
6.0
ns
7.5
7.5
ns
110
110
110
Page 32 of 63
Rev. 1.0 June 2007