K4B1G0446C Datasheet, PDF (39/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
[ Table 39 ] IDD Measurement Conditions for IDD5B
Current
IDD5B
Name
Burst Refresh Current
Measurement Condition
CKE
HIGH
External Clock
on
t_CK
t_RC
t_RAS
t_RCD
t_RRD
t_RFC
CL
t_CKmin(IDD)
n.a.
n.a.
n.a.
n.a.
t_RFCmin(IDD)
n.a.
AL
n.a.
CS
HIGH btw. valid cmds
Addr. and cmd Inputs
SWITCHING
Data inputs
Output Buffer DQ,DQS / MR1 bit A12
Rtt_NOM, Rtt_WE
SWITCHING
off / 1
disabled
Burst length
n.a.
Active banks
Idle banks
Refresh command every t_RFC=t_RFCmin
none
Precharge Power Down Mode
/ Mode Register Bit
n.a.
1Gb DDR3 SDRAM
Page 39 of 63
Rev. 1.0 June 2007