K4B1G0446C Datasheet, PDF (44/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
12.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600
12.1 Clock specification
Parameter Symbol
DDR3-800
min
max
DDR3-1066
min
max
DDR3-1333
min
max
DDR3-1600
min
max
Units
Average clock
tCK(avg)
period
2500
3333
1875
3333
1500
3333
1250
3333
ps
tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max tCK(avg)min tCK(avg)max
Clock period tCK(abs)
+
+
+
+
+
+
+
+
ps
tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max
[ Table 45 ] Clock specification
Add note fot tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window, where each clock period is calculated from rising edge to
rising edge.
N
∑
tCKj
N
N=200
j=1
Add note fot tCK(abs)
tCK(abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising edge.
Page 44 of 63
Rev. 1.0 June 2007