K4B1G0446C Datasheet, PDF (34/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16
T17 T18
CK
BA[2:0]
000
ADDR_a[9:0]
000
3FF
000
3FF
000
ADDR_b[10]
ADDR_c[13:11]
000
111
000
111
000
CS
RAS
CAS
WE
CMD
ACT
D
D
D
D
RD
D
D
D
D
D
D
D
D
D
PRE
D
D
D
DQ
0 011001 1
DM
IDD1 Measurement Loop
Figure 20.
IDD1 Example (DDR3-800-666, 1Gb x8): Data DQ is shown but the output buffer should be switched off (per MR1 Bit A12 ="1") to
achieve Iout = 0mA. Address inputs are split into 3 parts.
Page 34 of 63
Rev. 1.0 June 2007