K4B1G0446C Datasheet, PDF (54/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
[ Table 55 ] Derating values DDR3-1333/1600 tIS/tIH-ac/dc based - Alternate AC150 Threshold
2.0
1.5
1.0
CMD/
ADD ^0.9
Slew 0.8
rate _0.7
V/ns
0.6
0.5
0.4
∆tIS, ∆tIH Derating [ps] AC/DC based
Alternate AC150 Threshold -> VIH(ac) = VREF(dc) + 150mV, VIL(ac) = VREF(dc) - 150mV
CLK,CLK Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH
70
50
75
50
75
50
83
58
91
66
99
74 107 84
50
34
50
34
50
34
58
42
66
50
74
58
82
68
0
0
0
0
0
0
8
8
16
16
24
24
32
34
0
-4
0
-4
0
-4
8
4
16
12
24
20
32
30
0
-10
0
-10
0
-10
8
-2
16
6
24
14
32
24
0
-16
0
-16
0
-16
8
-8
16
0
24
8
32
18
-1
-26
-1
-26
-1
-26
7
-18 15 -10 23
-2
31
8
-10 -40 -10 -40 -10 -40
-2
-32
6
-24 14 -16 22
-6
-25 -60 -25 -60 -25 -60 -17 -52
-9
-44
-1
-36
7
-26
1.0V/ns
∆tIS ∆tIH
115 100
90
84
40
50
40
46
40
40
40
34
39
24
30
10
15 -10
[ Table 56 ] Required time t_VAC above VIH(ac) {blow VIL(ac)} for valid transition
Slew Rate[V/ns]
t_VAC @175mV [ps]
min
max
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
< 0.5
75
-
57
-
50
-
38
-
34
-
29
-
22
-
13
-
0
-
0
-
t_VAC @50mV [ps]
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
150
-
150
-
Page 54 of 63
Rev. 1.0 June 2007