K4B1G0446C Datasheet, PDF (30/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
Begin point : Rising edge of CK - CK
with ODT being first registered low
CK
CK
VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOFPD
End point Extrapolated point at VRTT_Nom
V_SW1
T_SW2
T_SW1
VTT
VSSQ
Figure 18. Definition of tAOFPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
CK
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
VTT
CK
VRTT_Nom
t_ADC
End point Extrapolated point at VRTT_Nom
DQ, DM
DQS , DQS
TDQS , TDQS
End point
Extrapolated point
at VRTT_Nom
T_SW21
T_SW11
V_SW1
V_SW2
VRTT_Wr
t_ADC
VRTT_Nom
T_SW22
T_SW12
End point Extrapolated point at VRTT_Wr
VSSQ
Figure 19. Definition of tADC
Page 30 of 63
Rev. 1.0 June 2007