K4B1G0446C Datasheet, PDF (20/63 Pages) Samsung semiconductor – 1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C
1Gb DDR3 SDRAM
9.0 AC and DC Output Measurement Levels
9.1 Single Ended AC and DC Output Levels
[ Table 14 ] Single Ended AC and DC output levels
Symbol Parameter
V_OH(DC)
V_OM(DC)
V_OL(DC)
V_OH(AC)
V_OL(AC)
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output SR)
AC output low measurement level (for output SR)
DDR3-800/1066/1333/1600
0.8 x VDDQ
0.5 x VDDQ
0.2 x VDDQ
VTT + 0.1 x VDDQ
VTT - 0.1 x VDDQ
Units
V
V
V
V
V
Notes
1
1
Note :
1. The swing of +/-0.1xVDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 34ohms and
an effective test load of 25ohms to VTT=VDDQ/2.
9.2 Differential AC and DC Output Levels
Symbol Parameter
V_OHdiff(AC) AC differential output high measurement level (for output SR)
V_OLdiff(DC) AC differential output low measurement level (for output SR)
[ Table 15 ] Differential AC and DC output levels
DDR3-800/1066/1333/1600
+0.2 x VDDQ
-0.2 x VDDQ
Units
V
V
Notes
1
1
Note :
1. The swing of +/-0.2xVDDQ is based on approximately 50% of the static singel ended output high or low swing with a driver impedance of 34ohms and
an effective test load of 25ohms to VTT=VDDQ/2 at each of the differential outputs
Page 20 of 63
Rev. 1.0 June 2007