MC68HC05B4 Datasheet, PDF (275/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

Preliminary ^External
signal
(TCAP1,
TCAP2)
t_TLTL
t_TH
t_TL
Figure H-10 Timer relationship
H.10
EPROM electrical characteristics
Table H-13 DC electrical characteristics for 5V operation
(V_DD = 5 Vdc ± 10%, V_SS = 0 Vdc, T_A = 25°C)
Characteristic⁽¹⁾
Symbol Min
Typ ⁽²⁾
Max
Unit
Preliminary EPROM
Absolute maximum voltage
Programming voltage
Programming current
Read voltage
V_PP6 max V_DD
V_PP6
15
I_PP6
—
V_PP6R
V_DD
—
18
V
15.5
16
V
50
64
mA
V_DD
V_DD
V
(1) All I_DD measurements taken with suitable decoupling capacitors across the power supply to suppress the
transient switching currents inherent in CMOS designs (see Section 2).
(2) Typical values are at mid point of voltage range and at 25°C only.
Table H-14 Control timing for 5V operation
(V_DD = 5.0 Vdc ± 10%, V_SS = 0 Vdc, T_A = 25°C)
Characteristic
Symbol Min
Max Unit
EPROM programming time
t _PROG
5
20
ms
Table H-15 Control timing for 3.3V operation
Preliminary ^{(VDD = 3.3Vdc± 10%,VSS = 0Vdc,TA = 25°C)}
Characteristic
Symbol Min
EPROM programming time
t _PROG
5
Max Unit
20
ms
14
MC68HC05B6
Rev. 4
MC68HC705B32
MOTOROLA
H-29