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MC68HC05B4 Datasheet, PDF (272/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
Table H-10 A/D characteristics for 3.3V operation
Preliminary (VDD = 3.3Vdc± 10%,VSS = 0Vdc,TA = –40 to +85°C)
Characteristic
Parameter
Min
Resolution
Number of bits resolved by the A/D
8
Non-linearity
Quantization error
Max deviation from the best straight line through the A/D
transfer characteristics
—
(VRH = VDD and VRL = 0V)
Uncertainty due to converter resolution
—
Absolute accuracy
Difference between the actual input voltage and the
full-scale equivalent of the binary code output code for all —
errors
Conversion range
Analog input voltage range
V RL
VRH
Maximum analog reference voltage
V RL
Max
—
±1
±1
±2
VRH
VDD + 0.1
Unit
Bit
LSB
LSB
LSB
V
V
VRL
Minimum analog reference voltage
V SS – 0.1
VRH
V
∆VR
Minimum difference between V RH and VRL
3
—
V
Conversion time
Total time to perform a single analog to digital conversion
Preliminary Internal RC oscillator
Monotonicity
Conversion result never decreases with an increase in
input voltage and has no missing codes
Zero input reading
Full scale reading
Sample acquisition time
Conversion result when VIN = VRL
Conversion result when VIN = VRH
Analog input acquisition sampling
Internal RC oscillator(1)
Sample/holdcapacitance Input capacitance on PD0/AN0–PD7/AN7
Input leakage(2)
Input leakage on A/D pins PD0/AN0–PD7/AN7, VRL, VRH
—
32
µs
GUARANTEED
00
—
Hex
—
FF
Hex
—
12
µs
—
12
pF
—
1
µA
(1) Source impedances greater than 10kΩ will adversely affect internal charging time during input sampling.
(2) The external system error caused by input leakage current is approximately equal to the product of R source and input
current. Input current to A/D channel will be dependent on external source impedance (see Figure 8-2).
14
MOTOROLA
H-26
Preliminary
MC68HC705B32
TPG
MC68HC05B6
Rev. 4